HW3 · P5: Inverter VTC & Delays (Baker 11.14)

ENEE 411 Homework 3, Problem 5 (Baker 11.14), rebuilt in full course notation on long-channel Table 9.1 and Lecture 11, covering two ratioed (non-complementary) inverters. Part (a) derives the square-law VTC: at VSP both devices are saturated with equal drain currents, so the switching point follows from sqrt(betaD/betaL). The NMOS-load inverter degrades the high output, with VOH = VDD - VTHN = 4.2 V, VOL about 0.36 V, and VSP about 1.85 V; the PMOS-load inverter degrades the low output instead, with VOL = |VTHP| = 0.9 V, VOH about 4.64 V, and VSP about 3.11 V. Part (b) finds the delays into a 100 fF load using the digital resistor model t = 0.7*R*Ctot: a strong driver takes about 17 ps while a weak load takes 80 to 150 ps, which makes tPHL and tPLH asymmetric and gives the 4-to-1 rule, tLH > tHL. The 21 slides use real MOSFET-symbol inverter schematics, VTC and waveform figures, three traps, two checks, and a SPICE VTC and .tran plan.

Subject: Analog CMOS IC Design · 47 slides · diagram-first lesson

Open the interactive version of this deck · Homework for this lesson

What this lesson covers

The lesson, slide by slide

1. HW3 · P5 Inverter VTC & Delays

Title

ENEE 411 · Baker 11.14 · Lecture 11

Two ratioed inverters - one with an NMOS load, one with a PMOS load. Find the switching point and the output levels with the square law, then estimate how fast each drives 100 fF.

2. What you will be able to do

Objectives

These are not complementary CMOS inverters - they are ratioed, and that is the whole lesson. By the end you can:

3. What survived from HW3 · P4: Voltage at Point A (Baker 10.14)?

Warm-up

Discussion prompt

Before we open HW3 · P5: Inverter VTC & Delays (Baker 11.14): without looking back, what was the main idea of HW3 · P4: Voltage at Point A (Baker 10.14), and what could you do by the end of it that you could not do before?

Hint: One sentence for the idea, one for the skill. If the second one is blank, that is the part to revisit.

Answer:

ENEE 411 Homework 3, Problem 4 (Baker 10.14), long-channel Table 9.1, full course-notation rebuild on Lecture 10 (the MOSFET pass gate). The two rules: an NMOS PG passes a good 0 but a 1 with one threshold drop (stops at VDD-VTHN=4.2V); a PMOS PG passes a good 1 but a 0 with a drop (stops at |VTHP|=0.9V).

4. Process & device sizes

Concept

parametervalue
VDD5 V
VTHN, |VTHP|0.8 V, 0.9 V
KPn, KPp120, 40 uA/V^2
driver size10/1 -> W/L = 10
load size10/5 -> W/L = 2
load capacitanceCL = 100 fF (part b)

Define beta = KP*(W/L). Driver betaD uses W/L = 10; load betaL uses W/L = 2, so the strength ratio is betaD/betaL = 5 - the load is ~5x weaker (close to the 4-to-1 rule from Lecture 11).

5. Fill in: value for Process & device sizes

Comparison

Comparison matrix

From Process & device sizes: refill the value column from what you know. The rest of the table is as it appeared.

parametervalue
VDD5 V
VTHN, |VTHP|0.8 V, 0.9 V
KPn, KPp120, 40 uA/V^2
driver size10/1 -> W/L = 10
load size10/5 -> W/L = 2
load capacitanceCL = 100 fF (part b)

6. The two inverters

Concept

Figure (svg): Two ratioed inverters side by side. Left, the NMOS-load inverter: an NMOS load (gate and drain tied to VDD, 10/5) stacked above an NMOS driver (gate = In, source = ground, 10/1); output between them. Right, the PMOS-load inverter: a PMOS driver (gate = In, source = VDD, 10/1) above a PMOS load (gate and source at ground, 10/5); output between them.

Left: NMOS load (always on, gate=VDD). Right: PMOS load (always on, gate=GND).

Left - NMOS-load inverter: the load is an NMOS with gate at VDD; the bottom NMOS (gate = In) is the driver. An NMOS load is the wrong polarity to pass a clean high (Lecture 11 calls this the NMOS-only inverter).

Right - PMOS-load inverter: the load is a PMOS with gate at GND; the top PMOS (gate = In) is the driver. A PMOS load is the wrong polarity to pass a clean low.

In both, the load is always on and the driver is input-controlled - so the output is a tug-of-war set by the size ratio. That is ratioed logic.

7. Break it if you can: The two inverters

Counterexample

Discussion prompt

In both, the load is always on and the driver is input-controlled - so the output is a tug-of-war set by the size ratio. That is ratioed logic.

That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.

Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.

8. The equations we need

Concept

Two square-law forms, picked by region:

\[ I_{sat}=\tfrac12\beta(V_{GS}-V_{TH})^2,\qquad I_{tri}=\beta\!\left[(V_{GS}-V_{TH})V_{DS}-\tfrac{V_{DS}^2}{2}\right] \]

At any operating point the load current = driver current. Choosing each device's region (triode vs saturation) and equating currents is the whole VTC method (Lecture 11).

9. Break it if you can: The equations we need

Counterexample

Discussion prompt

At any operating point the load current = driver current. Choosing each device's region (triode vs saturation) and equating currents is the whole VTC method (Lecture 11).

That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.

Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.

10. Without one step: Recipe: VOH, VOL, and VSP

Constraint

Discussion prompt

Run Recipe: VOH, VOL, and VSP with this step confiscated:

VSP: at In = Out = VSP both devices are saturated; equate the two saturation currents.

Is it still possible? If it is, say what takes its place and what it costs you. If it is not, say exactly what that step was providing that nothing else does.

Hint: A step you can drop for free was never load-bearing. If you cannot drop it, name the thing that goes wrong the moment it is gone.

Answer:

  1. VOH / VOL from the LOAD's reach: an always-on NMOS load reaches only VDD - VTHN; an always-on PMOS load reaches only |VTHP|.
  2. The other (good) rail is ratioed: driver in triode = load in saturation, equate currents, solve.
  3. VSP: at In = Out = VSP both devices are saturated; equate the two saturation currents.
  4. The ratio shortcut: sqrt(betaD/betaL) falls right out of the equal-saturation-current equation.

11. Recipe: VOH, VOL, and VSP

Pattern

  1. VOH / VOL from the LOAD's reach: an always-on NMOS load reaches only VDD - VTHN; an always-on PMOS load reaches only |VTHP|.
  2. The other (good) rail is ratioed: driver in triode = load in saturation, equate currents, solve.
  3. VSP: at In = Out = VSP both devices are saturated; equate the two saturation currents.
  4. The ratio shortcut: sqrt(betaD/betaL) falls right out of the equal-saturation-current equation.

12. Where does it stop working: Recipe: VOH, VOL, and VSP

Edge cases

Discussion prompt

Recipe: VOH, VOL, and VSP works on the cases you have just seen. Push it to the edge: what is the most degenerate input it still handles — empty, zero, one item, everything equal — and what is the first case where it stops being true? Name the case, not just "it breaks".

Hint: Try the smallest legal input, then the largest, then the one where two things collide. Methods are specified at their edges; the middle takes care of itself.

Answer:

  1. VOH / VOL from the LOAD's reach: an always-on NMOS load reaches only VDD - VTHN; an always-on PMOS load reaches only |VTHP|.
  2. The other (good) rail is ratioed: driver in triode = load in saturation, equate currents, solve.
  3. VSP: at In = Out = VSP both devices are saturated; equate the two saturation currents.
  4. The ratio shortcut: sqrt(betaD/betaL) falls right out of the equal-saturation-current equation.

13. Part (a) NMOS-load inverter

Section

degraded HIGH

14. Guess the shape of the answer: (a) VOH - the load gives up the high

Estimation

Predict first

Drive In low so the driver is off; the NMOS load pulls Out up. An NMOS load (gate at VDD) shuts off once its source reaches one threshold below its gate:

Commit before you compute: what does (a) VOH - the load gives up the high come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Note the body effect

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. The load's source rises to ~4.2 V, so its VTHN actually increases - the real VOH is a bit below 4.2 V.

15. (a) VOH - the load gives up the high

Worked example

Drive In low so the driver is off; the NMOS load pulls Out up. An NMOS load (gate at VDD) shuts off once its source reaches one threshold below its gate:

\[ V_{OH}=V_{DD}-V_{THN}=5-0.8=4.2\,\text{V} \]

Note the body effect

Why: The load's source rises to ~4.2 V, so its VTHN actually increases - the real VOH is a bit below 4.2 V. SPICE gives the exact value.

16. (a) VOH - the load gives up the high — line by line

Picture it

Animation

Shows: Each line of the worked example "(a) VOH - the load gives up the high", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: The load's source rises to ~4.2 V, so its VTHN actually increases - the real VOH is a bit below 4.2 V. SPICE gives the exact value.

17. What has to be given first: (a) VOL - the strong driver wins

Missing information

Discussion prompt

Drive In = VDD. The driver (10/1) is in triode at small Out; the load (10/5) is in saturation. Set the two currents equal:

What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.

Hint: Anything you would have to invent to get started is a thing the problem must supply.

Answer:

With the 5:1 strength ratio the small-VOL solution is about 0.36 V - not a clean logic 0. Ratioed logic always has a nonzero VOL.

18. (a) VOL - the strong driver wins

Worked example

Drive In = VDD. The driver (10/1) is in triode at small Out; the load (10/5) is in saturation. Set the two currents equal:

\[ \tfrac12\beta_L(V_{DD}-V_{OL}-V_{THN})^2=\beta_D\!\left[(V_{DD}-V_{THN})V_{OL}-\tfrac{V_{OL}^2}{2}\right] \]

Use betaD/betaL = 5 and solve

Why: With the 5:1 strength ratio the small-VOL solution is about 0.36 V - not a clean logic 0. Ratioed logic always has a nonzero VOL.

\[ V_{OL}\approx0.36\,\text{V} \]

19. (a) VOL - the strong driver wins — line by line

Picture it

Animation

Shows: Each line of the worked example "(a) VOL - the strong driver wins", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: With the 5:1 strength ratio the small-VOL solution is about 0.36 V - not a clean logic 0. Ratioed logic always has a nonzero VOL.

20. Complete the line: (a) VSP - both devices saturated

Fill the middle

Fill in the blanks

From (a) VSP - both devices saturated — finish the line. Write what belongs on the right of the equals sign before you look.

\sqrt(V_{DD}-V_{SP}-V_{THN})___}\,(V____-V____) = ___

Why: Producing the right-hand side unprompted is the difference between recognising this line and being able to use it. 2.236(VSP - 0.8) = 4.2 - VSP -> 3.236*VSP = 5.989 -> VSP = 1.85 V.

21. (a) VSP - both devices saturated

Worked example

Figure (svg): Voltage transfer curve for the NMOS-load inverter. Output starts at VOH = 4.2 V (not the full 5 V) for low input, drops steeply through the switching point VSP near 1.85 V, and flattens near VOL = 0.36 V for high input. A dashed line marks the missing top 0.8 V where the high is degraded.

VTC starts at 4.2 V, not 5 V - the degraded high.

At the switching point In = Out = VSP, both NMOS are saturated. Equate their saturation currents and take the square root (Lecture 11):

\[ \sqrt{\tfrac{\beta_D}{\beta_L}}\,(V_{SP}-V_{THN})=(V_{DD}-V_{SP}-V_{THN}) \]

Plug in sqrt(5) = 2.236

Why: 2.236(VSP - 0.8) = 4.2 - VSP -> 3.236*VSP = 5.989 -> VSP = 1.85 V. The strong driver pulls the trip point well below mid-rail.

\[ V_{SP}\approx1.85\,\text{V} \]

22. (a) VSP - both devices saturated — line by line

Picture it

Animation

Shows: Each line of the worked example "(a) VSP - both devices saturated", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: 2.236(VSP - 0.8) = 4.2 - VSP -> 3.236*VSP = 5.989 -> VSP = 1.85 V. The strong driver pulls the trip point well below mid-rail.

23. Something is wrong here: assuming VOH = VDD

Anomaly

Predict first

A student writes this, and it looks reasonable:

Reading the NMOS-load inverter like a CMOS inverter and writing VOH = VDD = 5 V.

It is wrong. Say what breaks — and say it before you turn the page.

Correct: An NMOS load cannot pass a clean high - it shuts off one VTHN below its gate.

Ask what rail the load can actually deliver.

Why: An NMOS load cannot pass a clean high - it shuts off one VTHN below its gate. The output never reaches 5 V.

24. Trap: assuming VOH = VDD

Trap

The trap

Reading the NMOS-load inverter like a CMOS inverter and writing VOH = VDD = 5 V.

Report a full-rail high

Why: An NMOS load cannot pass a clean high - it shuts off one VTHN below its gate. The output never reaches 5 V.

The fix

Ask what rail the load can actually deliver.

VOH = VDD - VTHN = 4.2 V

Why: The always-on NMOS load gives up one threshold on the high side. (A PMOS load does the same to the LOW side.)

25. Break it on purpose: assuming VOH = VDD

Break the constraint

Discussion prompt

The rule this trap just fixed:

The always-on NMOS load gives up one threshold on the high side. (A PMOS load does the same to the LOW side.)

Now break it on purpose. Build a case that violates it and follow the consequences until something visibly fails. Where does the failure first show up — and would you have noticed it if you had not been looking?

Hint: The dangerous rules are the ones whose violation still produces an answer. If yours fails loudly, try to find one that fails quietly.

Answer:

An NMOS load cannot pass a clean high - it shuts off one VTHN below its gate. The output never reaches 5 V.

26. Part (a) continued PMOS-load inverter

Section

degraded LOW

27. Guess the shape of the answer: (a) The PMOS-load inverter is the dual

Estimation

Predict first

Now the always-on load is a PMOS (gate at GND). It cannot pull Out below one threshold above ground, so the low is the degraded rail:

Commit before you compute: what does (a) The PMOS-load inverter is the dual come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Switching point

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. Both PMOS saturated at VSP: 2.236(VDD - VSP - 0.9) = (VSP - 0.9) -> VSP ~ 3.11 V, pushed above mid-rail (mirror image of the NMOS-load case).

28. (a) The PMOS-load inverter is the dual

Worked example

Now the always-on load is a PMOS (gate at GND). It cannot pull Out below one threshold above ground, so the low is the degraded rail:

\[ V_{OL}=|V_{THP}|=0.9\,\text{V} \]

The high is ratioed

Why: When In = 0 the strong PMOS driver (10/1) pulls up against the weak PMOS load (10/5). By the same ratio math, VOH ~ VDD - 0.36 = 4.64 V.

Switching point

Why: Both PMOS saturated at VSP: 2.236(VDD - VSP - 0.9) = (VSP - 0.9) -> VSP ~ 3.11 V, pushed above mid-rail (mirror image of the NMOS-load case).

29. Decode the notation: (a) The PMOS-load inverter is the dual

Notation

Annotate

From (a) The PMOS-load inverter is the dual — read this one piece at a time. What is each part doing?

On: \( V_{OL}=|V_{THP}|=0.9\,\text{V} \)

  • When In = 0 the strong PMOS driver (10/1) pulls up against the weak PMOS load (10/5). By the same ratio math, VOH ~ VDD - 0.36 = 4.64 V.
  • Both PMOS saturated at VSP: 2.236(VDD - VSP - 0.9) = (VSP - 0.9) -> VSP ~ 3.11 V, pushed above mid-rail (mirror image of the NMOS-load case).

30. Both inverters at a glance

Concept

inverterVOHVOLVSP
NMOS-load4.2 V (degraded)~0.36 V~1.85 V
PMOS-load~4.64 V0.9 V (degraded)~3.11 V

Symmetric pattern: an NMOS load eats the high, a PMOS load eats the low, and the strong driver pulls VSP toward its own rail. Generate both VTCs in SPICE (DC sweep of Vin) and overlay your hand points.

31. Fill in: VOL for Both inverters at a glance

Comparison

Comparison matrix

From Both inverters at a glance: refill the VOL column from what you know. The rest of the table is as it appeared.

inverterVOHVOLVSP
NMOS-load4.2 V (degraded)~0.36 V~1.85 V
PMOS-load~4.64 V0.9 V (degraded)~3.11 V

32. Part (b) Delays into 100 fF

Section

tPHL and tPLH

33. What has to be given first: (b) The digital resistor model

Missing information

Discussion prompt

Lecture 10's digital model: a switching MOSFET is just an effective resistance R, and the delay to move the charge on the load is:

What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.

Hint: Anything you would have to invent to get started is a thing the problem must supply.

Answer:

Estimate R from the device's on-current, R ~ VDD/(2*ID,sat). The strong driver (10/1) has a small R (~0.2 kohm); the weak load (10/5) has ~5x that (the W/L ratio).

34. (b) The digital resistor model

Worked example

Lecture 10's digital model: a switching MOSFET is just an effective resistance R, and the delay to move the charge on the load is:

\[ t_p=0.7\,R\,C_{tot} \]

Find each device's effective R

Why: Estimate R from the device's on-current, R ~ VDD/(2*ID,sat). The strong driver (10/1) has a small R (~0.2 kohm); the weak load (10/5) has ~5x that (the W/L ratio).

Driving edge picks the device

Why: tPHL (output falling) is set by whichever device discharges CL; tPLH (rising) by whichever charges it. Different devices, different R - so the delays differ.

35. Decode the notation: (b) The digital resistor model

Notation

Annotate

From (b) The digital resistor model — read this one piece at a time. What is each part doing?

On: \( t_p=0.7\,R\,C_{tot} \)

  • Estimate R from the device's on-current, R ~ VDD/(2*ID,sat). The strong driver (10/1) has a small R (~0.2 kohm); the weak load (10/5) has ~5x that (the W/L ratio).
  • tPHL (output falling) is set by whichever device discharges CL; tPLH (rising) by whichever charges it. Different devices, different R - so the delays differ.

36. Guess the shape of the answer: (b) Why tPHL and tPLH are asymmetric

Estimation

Predict first

In the NMOS-load inverter the driver (10/1) is 5x stronger than the load (10/5), so:

Commit before you compute: what does (b) Why tPHL and tPLH are asymmetric come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Read the qualitative result

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. tPLH >> tPHL. Lecture 11 states it directly for these configs: because R_load != R_driver, the switching times are asymmetric, with tLH > tHL.

37. (b) Why tPHL and tPLH are asymmetric

Worked example

Figure (svg): Transient waveform. The input switches; the output falls quickly (short tPHL, strong driver) and rises slowly (long tPLH, weak load). The fast falling edge and slow rising edge are visibly asymmetric.

Strong driver = fast edge; weak load = slow edge (tLH > tHL).

In the NMOS-load inverter the driver (10/1) is 5x stronger than the load (10/5), so:

edgedriven byRdelay (CL=100fF)
tPHL (fall)strong driver~0.2 kohm~17 ps
tPLH (rise)weak load~1 kohm+~80-150 ps

Read the qualitative result

Why: tPLH >> tPHL. Lecture 11 states it directly for these configs: because R_load != R_driver, the switching times are asymmetric, with tLH > tHL.

SPICE plan: .tran with a pulse into a 100 fF load; measure tPHL and tPLH at the 50% points. The professor's own caveat: hand delays land within ~2x of SPICE.

38. Fill in: delay (CL=100fF) for (b) Why tPHL and tPLH are asymmetric

Comparison

Comparison matrix

From (b) Why tPHL and tPLH are asymmetric: refill the delay (CL=100fF) column from what you know. The rest of the table is as it appeared.

edgedriven byRdelay (CL=100fF)
tPHL (fall)strong driver~0.2 kohm~17 ps
tPLH (rise)weak load~1 kohm+~80-150 ps

39. Something is wrong here: expecting symmetric delays

Anomaly

Predict first

A student writes this, and it looks reasonable:

Assuming tPHL = tPLH because 'it's an inverter.'

It is wrong. Say what breaks — and say it before you turn the page.

Correct: True only for a balanced CMOS inverter sized so Rn = Rp.

Compute each edge from the device that drives it.

Why: True only for a balanced CMOS inverter sized so Rn = Rp. These are RATIOED inverters with a deliberately weak load.

40. Trap: expecting symmetric delays

Trap

The trap

Assuming tPHL = tPLH because 'it's an inverter.'

Quote one delay for both edges

Why: True only for a balanced CMOS inverter sized so Rn = Rp. These are RATIOED inverters with a deliberately weak load.

The fix

Compute each edge from the device that drives it.

tPHL from the driver R, tPLH from the load R

Why: Different devices with a 5:1 strength ratio drive the two edges, so the delays differ by roughly that ratio. The weak-load edge dominates the speed.

41. Which of these survive contact with HW3 · P5: Inverter VTC & Delays (Baker 11.14)?

Two truths and a lie

Sort into buckets

Some of these hold up and some are the exact mistakes this lesson is built to prevent. Sort them.

Holds up
In both, the load is always on and the driver is input-controlled - so the output is a tug-of-war set by the size ratio. That is ratioed logic.; At any operating point the load current = driver current. Choosing each device's region (triode vs saturation) and equating currents is the whole VTC method (Lecture 11).
Breaks
Reading the NMOS-load inverter like a CMOS inverter and writing VOH = VDD = 5 V.; Assuming tPHL = tPLH because 'it's an inverter.'
sound
These are stated as this lesson states them — each one survives the edge cases HW3 · P5: Inverter VTC & Delays (Baker 11.14) puts it through.
flawed
Each of these is lifted from a trap in this deck: reasonable-sounding, and wrong in a way that only shows up once you rely on it.

42. Rule out three: Check: VOH of the NMOS-load inverter

Elimination

Eliminate the wrong options

The output-high voltage VOH of the NMOS-load inverter is:

3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.

  • A. 4.2 V (= VDD - VTHN)
  • B. 5 V (= VDD)
  • C. 0.9 V (= |VTHP|)
  • D. 1.85 V (= VSP)

Survives elimination: A

Why: The NMOS load shuts off when its source reaches VDD - VTHN, so it can only pull the output up to 4.2 V. The high is degraded by one NMOS threshold - the defining feature of an NMOS-load inverter (the same drop as an NMOS pass gate in P4).

43. Check: VOH of the NMOS-load inverter

Check

The load is an NMOS with gate and drain at VDD = 5 V, VTHN = 0.8 V, pulling the output high. What is VOH?

Check your understanding

The output-high voltage VOH of the NMOS-load inverter is:

  • A. 4.2 V (= VDD - VTHN) (correct)
  • B. 5 V (= VDD)
  • C. 0.9 V (= |VTHP|)
  • D. 1.85 V (= VSP)

Answer: A

Why: The NMOS load shuts off when its source reaches VDD - VTHN, so it can only pull the output up to 4.2 V. The high is degraded by one NMOS threshold - the defining feature of an NMOS-load inverter (the same drop as an NMOS pass gate in P4).

Why B tempts people
That assumes a full-rail high like a complementary CMOS inverter. An NMOS load always loses one VTHN on the high side.
Why C tempts people
That is the degraded LOW of the PMOS-load inverter (its dual), not the NMOS-load high.
Why D tempts people
That is the switching point VSP, where Vin = Vout on the transition - not the output-high level.

44. Rule out three: Check: which edge is slower?

Elimination

Eliminate the wrong options

Comparing the two edges of the NMOS-load inverter:

3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.

  • A. tPLH > tPHL, because the weak load charges the output high
  • B. tPHL > tPLH, because the strong driver charges the output
  • C. tPLH = tPHL, since both go through the same node
  • D. tPHL > tPLH, because the load is weaker than the driver

Survives elimination: A

Why: The rising edge (tPLH) is driven by the always-on NMOS LOAD (10/5), which is ~5x weaker than the driver, so its effective R is ~5x larger and tPLH ~ 0.7RCtot is the larger delay. The falling edge (tPHL) uses the strong driver (10/1) and is fast. So tPLH > tPHL.

45. Check: which edge is slower?

Check

In the NMOS-load inverter the driver is 10/1 and the load is 10/5, driving 100 fF. Which propagation delay is larger, and why?

Check your understanding

Comparing the two edges of the NMOS-load inverter:

  • A. tPLH > tPHL, because the weak load charges the output high (correct)
  • B. tPHL > tPLH, because the strong driver charges the output
  • C. tPLH = tPHL, since both go through the same node
  • D. tPHL > tPLH, because the load is weaker than the driver

Answer: A

Why: The rising edge (tPLH) is driven by the always-on NMOS LOAD (10/5), which is ~5x weaker than the driver, so its effective R is ~5x larger and tPLH ~ 0.7RCtot is the larger delay. The falling edge (tPHL) uses the strong driver (10/1) and is fast. So tPLH > tPHL.

Why B tempts people
The strong driver pulls the output DOWN (tPHL), making that edge FAST, not slow. It does not set the slow rising edge.
Why C tempts people
The two edges are driven by DIFFERENT devices (driver vs load) with very different strengths, so the delays are not equal - that is the whole asymmetry.
Why D tempts people
The conclusion (load weaker than driver) is true, but a weak load makes the RISING edge slow (tPLH), not tPHL. tPHL uses the strong driver.

46. Connect it up: HW3 · P5: Inverter VTC & Delays (Baker 11.14)

Connect it up

Draw it

One page, no notation unless you need it: draw how these connect — Part (a) NMOS-load inverter · Part (a) continued PMOS-load inverter · Part (b) Delays into 100 fF. Put an arrow wherever one of them is what makes another possible, and label the arrow with why.

47. What you can do now

Recap

quantityNMOS-loadPMOS-load
VOH4.2 V~4.64 V
VOL~0.36 V0.9 V
VSP~1.85 V~3.11 V

That closes HW3: P1 diff-amp, P2 two-stage op-amp, P3 three-stage op-amp, P4 pass-gate threshold drops, and P5 ratioed inverters - all on the same Baker process tables you can verify in SPICE.

Sources

  1. R. J. Baker, CMOS: Circuit Design, Layout, and Simulation, 4th ed., Problem 11.14 (inverter switching point, output levels, delays). — Wiley-IEEE Press, 2019.
  2. ENEE 411 Lecture 11 (The CMOS Inverter): VSP is where both MOSFETs are saturated and the drain currents are equal; VIH/VIL/VOH/VOL; the NMOS-only and PMOS-load configurations (the 4-to-1 rule) with asymmetric switching times (tLH > tHL). — Course lecture notes, 2026.
  3. ENEE 411 Lecture 10 (digital model): a switching MOSFET is an effective resistance R; propagation delay = 0.7*R*Ctot; PMOS resistance is ~3x the NMOS (mobility). — Course lecture notes, 2026. The professor notes hand delays are within ~2x of SPICE.
  4. Long-channel Table 9.1: VDD=5V, VTHN=0.8V, |VTHP|=0.9V, KPn=120uA/V^2, KPp=40uA/V^2; device sizes 10/1 (driver) and 10/5 (load). VSP, VOL, VOH from the square law; delays from t=0.7*R*Ctot. — Author verification, 2026-06-27. Body effect lowers the NMOS-load VOH slightly; SPICE gives the exact VTC and delays.

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