HW2 · DC Bias: Currents & Saturation (Baker 20.25, 20.45)

Part 1 of 2 for ENEE 411 Homework 2. It works the two DC-operating-point problems end to end using the Baker long-channel process. In Problem 20.25 you trace VSG through a PMOS mirror to find the current in M3, which comes out at 10 uA to first order and about 11 uA once channel-length modulation is included. In Problem 20.45 you solve the reference-branch KVL quadratic for the bias current (about 29.6 uA), find every node voltage, and derive the largest R2 that still keeps the cascode M4 in saturation - about 127 kohm, which means the given 125 kohm sits right at the edge. The 23 slides include schematic SVGs, a table separating the stated parameters from the corrected ones, two traps, and two checks.

Subject: Analog CMOS IC Design · 51 slides · diagram-first lesson

Open the interactive version of this deck · Homework for this lesson

What this lesson covers

The lesson, slide by slide

1. HW2 · DC Bias Currents & Saturation

Title

ENEE 411 · Problems 20.25 & 20.45

Two operating-point problems, worked to the number. Find the current a mirror forces, and the biggest load resistor a cascode can tolerate before it leaves saturation.

2. What you will be able to do

Objectives

Every analog hand-analysis starts the same way: pin the operating point before you ever touch a small-signal model. By the end you can:

3. The process table we are using

Concept

Problem 20.25 says use the long-channel process parameters. That table isn't on the homework sheet, so we use Baker's standard long-channel set. Every number downstream rides on these - if your section's Table 9.1 differs, swap them in and the method is identical.

parameterNMOSPMOS
VDD5 V5 V
VTH0.8 V-0.9 V
KP = mu*Cox120 uA/V^240 uA/V^2
lambda (approx, L=2)0.06 /V0.06 /V
scale1 um (40/2 = 40um/2um)1 um

Sanity check that these are the intended values: in Problem 20.45 they make the given R2 = 125k land just under the saturation limit we'll derive - exactly how a textbook problem is designed.

4. Fill in: NMOS for The process table we are using

Comparison

Comparison matrix

From The process table we are using: refill the NMOS column from what you know. The rest of the table is as it appeared.

parameterNMOSPMOS
VDD5 V5 V
VTH0.8 V-0.9 V
KP = mu*Cox120 uA/V^240 uA/V^2
lambda (approx, L=2)0.06 /V0.06 /V
scale1 um (40/2 = 40um/2um)1 um

5. The two master equations

Concept

In saturation, the drain current is the square-law - this is the only device equation we need today:

\[ I_D=\tfrac{1}{2}\,KP\,\frac{W}{L}\,(V_{GS}-V_{TH})^2\,(1+\lambda V_{DS}) \]

A device is in saturation only while its drain-source voltage clears the overdrive:

\[ V_{DS}\ \ge\ V_{GS}-V_{TH}\equiv V_{ov} \]

For PMOS, read every voltage as source-relative: VSG, VSD, and |VTHP|. Same equations, signs flipped.

6. Break it if you can: The two master equations

Counterexample

Discussion prompt

In saturation, the drain current is the square-law - this is the only device equation we need today:

That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.

Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.

Answer:

A device is in saturation only while its drain-source voltage clears the overdrive:

7. Rebuild the recipe: Recipe: analyze any mirror / bias string

Ranking

Put in order

These are the steps of Recipe: analyze any mirror / bias string, scrambled. Put them back in order before the next slide shows you.

  1. Find the reference branch - the one with a known current or a diode-connected device - and solve it for Vov (and VGS).
  2. Copy the gate-source voltage to every device sharing that gate node.
  3. Scale the current by (W/L) ratios to get each branch current.
  4. Verify saturation at each drain with VDS >= Vov; only then is the square-law valid.

Why: This is the order the recipe itself gives. Recalling the sequence without the slide in front of you is the difference between recognising the method and being able to run it — most of what goes wrong in practice is a step done out of turn.

8. Recipe: analyze any mirror / bias string

Pattern

Both problems today are the same four moves. Memorize this order - it is the backbone of every bias calculation:

  1. Find the reference branch - the one with a known current or a diode-connected device - and solve it for Vov (and VGS).
  2. Copy the gate-source voltage to every device sharing that gate node.
  3. Scale the current by (W/L) ratios to get each branch current.
  4. Verify saturation at each drain with VDS >= Vov; only then is the square-law valid.

9. Where does it stop working: Recipe: analyze any mirror / bias string

Edge cases

Discussion prompt

Recipe: analyze any mirror / bias string works on the cases you have just seen. Push it to the edge: what is the most degenerate input it still handles — empty, zero, one item, everything equal — and what is the first case where it stops being true? Name the case, not just "it breaks".

Hint: Try the smallest legal input, then the largest, then the one where two things collide. Methods are specified at their edges; the middle takes care of itself.

Answer:

Both problems today are the same four moves. Memorize this order - it is the backbone of every bias calculation:

10. Problem 20.25 Current into M3

Section

Problem 1

11. The circuit: a 3-output PMOS mirror

Concept

Homework 2 schematic, Problem 20.25: three PMOS M1, M2, M3 sharing the VDD rail and a common gate node; M1 diode-connected sinks 20 uA, M2 drains through R2 = 175k to ground, M3 drains into a 2 V source.
Problem 20.25, exactly as drawn on the homework.

Three PMOS share one source rail (VDD) and one gate node. M1 is diode-connected (gate tied to drain) and is forced to carry the 20 uA the sink pulls.

M2 (same 40/2) and M3 (20/2) read that same VSG. The 175k resistor and the 2 V source set drain voltages - they do not set the branch currents.

Goal: the current in M3.

12. By analogy: The circuit: a 3-output PMOS mirror

Analogy

Discussion prompt

Explain The circuit: a 3-output PMOS mirror by analogy to something with no Analog CMOS IC Design in it at all — a queue, a recipe, a map, a bank balance, whatever fits. Then say where your analogy breaks.

Hint: An analogy that never breaks is not an analogy, it is the same idea wearing a hat. Find the seam — that is the part that is actually new.

Answer:

Three PMOS share one source rail (VDD) and one gate node. M1 is diode-connected (gate tied to drain) and is forced to carry the 20 uA the sink pulls.

13. Picture it first: A mirror copies a voltage, then scales

Picture it

Figure (svg): 20 microamps forced into a diode-connected device produces VSG of 1.124 volts on the shared gate wire, which fans out to M2 and M3.

Same VSG out to M2 and M3; current scales with W/L.

Discussion prompt

Read the picture before the words. What is this showing, and what is the one thing it is built to make obvious? Commit to an answer, then read on.

Hint: Name the parts, then say what changes between them — and if nothing changes, say what is being held still.

Answer:

The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.

14. A mirror copies a voltage, then scales

Intuition

The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.

Figure (svg): 20 microamps forced into a diode-connected device produces VSG of 1.124 volts on the shared gate wire, which fans out to M2 and M3.

Same VSG out to M2 and M3; current scales with W/L.

Copy that VSG onto another device with half the width, and you get half the current - independent of what its drain is doing, as long as it stays saturated.

15. Teach it back: A mirror copies a voltage, then scales

Explain it

Discussion prompt

Explain A mirror copies a voltage, then scales to a student a year behind you. No notation, no jargon they have not met — and it still has to be true.

Hint: If your explanation needs a symbol they have never seen, you are describing the notation rather than the idea.

Answer:

The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.

16. Guess the shape of the answer: Step 1 - VSG and Vov from M1

Estimation

Predict first

M1 is forced to 20 uA. Invert the square-law to get its overdrive. PMOS W/L = 40/2 = 20, KPp = 40 uA/V^2.

Commit before you compute: what does Step 1 - VSG and Vov from M1 come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Solve for Vov

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.

17. Step 1 - VSG and Vov from M1

Worked example

M1 is forced to 20 uA. Invert the square-law to get its overdrive. PMOS W/L = 40/2 = 20, KPp = 40 uA/V^2.

\[ 20\,\mu A=\tfrac12(40\,\mu A)\,(20)\,V_{ov}^2 \]

Solve for Vov

Why: Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.

\[ V_{SG}=|V_{THP}|+V_{ov}=0.9+0.224=1.124\ \text{V} \]

This 1.124 V now sits on the gate node feeding M2 and M3.

18. Step 1 - VSG and Vov from M1 — line by line

Picture it

Animation

Shows: Each line of the worked example "Step 1 - VSG and Vov from M1", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.

19. What has to be given first: Step 2 - M2 carries 20 uA (and stays…

Missing information

Discussion prompt

M2 is the same 40/2 device with the same VSG, so it copies the current 1:1.

What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.

Hint: Anything you would have to invent to get started is a thing the problem must supply.

Answer:

The 20 uA flows down through R2 to ground: VD2 = 20uA x 175k = 3.5 V.

20. Step 2 - M2 carries 20 uA (and stays saturated)

Worked example

M2 is the same 40/2 device with the same VSG, so it copies the current 1:1.

\[ I_{D2}=\frac{(W/L)_2}{(W/L)_1}\,I_{D1}=1\times 20\,\mu A=20\,\mu A \]

Find M2's drain voltage

Why: The 20 uA flows down through R2 to ground: VD2 = 20uA x 175k = 3.5 V.

Verify saturation: VSD2 >= Vov

Why: VSD2 = VDD - VD2 = 5 - 3.5 = 1.5 V, well above Vov = 0.224 V. M2 is saturated, so the 1:1 copy is valid.

21. Step 2 - M2 carries 20 uA (and stays saturated) — line by line

Picture it

Animation

Shows: Each line of the worked example "Step 2 - M2 carries 20 uA (and stays saturated)", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: VSD2 = VDD - VD2 = 5 - 3.5 = 1.5 V, well above Vov = 0.224 V. M2 is saturated, so the 1:1 copy is valid.

22. Step 3 - M3: half the width, half the current

Worked example

Figure (svg): M3 has W over L of 20 over 2, half of M1's 40 over 2, so its current is one half of 20 microamps, equal to 10 microamps.

Mirror ratio sets the current, not the 2 V load.

M3 shares the gate (same VSG = 1.124 V) but is 20/2 - half the W/L of M1.

\[ I_{D3}=\frac{(W/L)_3}{(W/L)_1}\,I_{D1}=\tfrac12\times 20\,\mu A=\boxed{10\ \mu A} \]

Verify saturation at the 2 V drain

Why: VSD3 = VDD - 2 = 5 - 2 = 3 V, far above Vov = 0.224 V. M3 is deep in saturation, so the mirror answer holds.

First-order answer: I in M3 = 10 uA.

23. Work backwards from the answer: Step 3 - M3: half the width, half the current

Reverse engineer

Discussion prompt

Work backwards. The example finished here:

Verify saturation at the 2 V drain

What was it asked to do, and what must it have been given? Reconstruct the problem from its answer.

Hint: Every quantity in the result had to enter somewhere. Account for each one.

Answer:

M3 shares the gate (same VSG = 1.124 V) but is 20/2 - half the W/L of M1.

24. Refinement: channel-length modulation

Concept

M1 and M3 see different drain voltages (M1: VSD = 1.124 V; M3: VSD = 3 V), so the (1 + lambda*VSD) factors don't cancel perfectly. With lambda = 0.06 /V:

\[ I_{D3}=10\,\mu A\cdot\frac{1+\lambda(3)}{1+\lambda(1.124)}=10\,\mu A\cdot\frac{1.18}{1.067}\approx 11.1\ \mu A \]

So ~10 uA to first order, ~11 uA once you include the drain-voltage dependence. Quote whichever level of precision your section expects - and confirm in SPICE.

25. Teach it back: Refinement: channel-length modulation

Explain it

Discussion prompt

Explain Refinement: channel-length modulation to a student a year behind you. No notation, no jargon they have not met — and it still has to be true.

Hint: If your explanation needs a symbol they have never seen, you are describing the notation rather than the idea.

Answer:

M1 and M3 see different drain voltages (M1: VSD = 1.124 V; M3: VSD = 3 V), so the (1 + lambda*VSD) factors don't cancel perfectly. With lambda = 0.06 /V:

26. Something is wrong here: thinking the load sets M3's current

Anomaly

Predict first

A student writes this, and it looks reasonable:

Treating the 2 V source (or R2) as if it controls the branch current, like a resistor divider.

It is wrong. Say what breaks — and say it before you turn the page.

Correct: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.

The shared VSG sets the current; the load only sets the drain voltage.

Why: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.

27. Trap: thinking the load sets M3's current

Trap

The trap

Treating the 2 V source (or R2) as if it controls the branch current, like a resistor divider.

Compute 'I = 2 V / something' from the load

Why: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.

Get a current that depends on the 2 V value

Why: Wrong model: change the 2 V to 3 V and you'd predict a big current change. The mirror says otherwise.

The fix

The shared VSG sets the current; the load only sets the drain voltage.

I_D3 = (W/L ratio) x I_ref = 1/2 x 20uA

Why: Current is fixed by geometry and VSG. The drain voltage is free to be whatever the load demands.

Use the load only to check VDS >= Vov

Why: The 2 V (VSD3 = 3 V) matters for one thing: confirming M3 is still saturated. It is, so I_D3 = 10 uA.

28. Break it on purpose: thinking the load sets M3's current

Break the constraint

Discussion prompt

The rule this trap just fixed:

Current is fixed by geometry and VSG. The drain voltage is free to be whatever the load demands.

Now break it on purpose. Build a case that violates it and follow the consequences until something visibly fails. Where does the failure first show up — and would you have noticed it if you had not been looking?

Hint: The dangerous rules are the ones whose violation still produces an answer. If yours fails loudly, try to find one that fails quietly.

Answer:

This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.

29. Rule out three: Check: the current in M3

Elimination

Eliminate the wrong options

To first order, what is the drain current in M3?

3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.

  • A. 10 uA
  • B. 20 uA
  • C. 40 uA
  • D. About 11.4 uA (2 V / 175 k)

Survives elimination: A

Why: M3 shares M1's VSG but has half the W/L (20/2 vs 40/2). A mirror scales current by the W/L ratio: I_D3 = (1/2) x 20 uA = 10 uA. Its 2 V drain only matters for confirming saturation (VSD = 3 V > Vov), which checks out.

30. Check: the current in M3

Check

M1 (40/2) carries 20 uA and is diode-connected; M3 (20/2) shares its gate and its drain sits at 2 V. Solve before tapping.

Check your understanding

To first order, what is the drain current in M3?

  • A. 10 uA (correct)
  • B. 20 uA
  • C. 40 uA
  • D. About 11.4 uA (2 V / 175 k)

Answer: A

Why: M3 shares M1's VSG but has half the W/L (20/2 vs 40/2). A mirror scales current by the W/L ratio: I_D3 = (1/2) x 20 uA = 10 uA. Its 2 V drain only matters for confirming saturation (VSD = 3 V > Vov), which checks out.

Why B tempts people
That is M1's and M2's current (both 40/2). M3 is 20/2 - half the width means half the copied current, 10 uA.
Why C tempts people
Doubles instead of halves - this would be right only if M3 were twice M1's W/L. It is half, so the current goes down, not up.
Why D tempts people
Treats the branch like a resistor divider through the load. A saturated MOSFET is a current source set by VSG and W/L, not by drain voltage over R2.

31. Problem 20.45 Currents, Voltages & max R2

Section

Problem 2

32. The circuit: stacked NMOS mirrors

Concept

Homework 2 schematic, Problem 20.45: left branch VDD through R1 = 100k into M3 over M1 to ground; right branch VDD through R2 = 125k into M4 over M2 to ground; all devices 40/4, two stacked NMOS mirrors.
Problem 20.45, exactly as drawn on the homework.

Left branch (R1, M3, M1) is the reference: both NMOS are diode-connected, so the gate of each ties to its own drain.

Right branch copies it: M2 mirrors M1, M4 mirrors M3 (gates tied across). All four are 40/4.

Find: the branch currents, the node voltages, and the largest R2 that keeps the cascode M4 in saturation.

33. By analogy: The circuit: stacked NMOS mirrors

Analogy

Discussion prompt

Explain The circuit: stacked NMOS mirrors by analogy to something with no Analog CMOS IC Design in it at all — a queue, a recipe, a map, a bank balance, whatever fits. Then say where your analogy breaks.

Hint: An analogy that never breaks is not an analogy, it is the same idea wearing a hat. Find the seam — that is the part that is actually new.

Answer:

Left branch (R1, M3, M1) is the reference: both NMOS are diode-connected, so the gate of each ties to its own drain.

34. The reference branch is one KVL loop

Intuition

Walk from VDD to ground down the left branch: you drop across R1, then across M3, then across M1. Because both FETs are diode-connected and identical, each drop is one VGS.

\[ V_{DD}=I\,R_1+V_{GS3}+V_{GS1}=I\,R_1+2V_{GS} \]

But I itself depends on VGS through the square-law - so this single loop is a quadratic in the overdrive. That coupling is the whole problem.

35. Break it if you can: The reference branch is one KVL loop

Counterexample

Discussion prompt

Walk from VDD to ground down the left branch: you drop across R1, then across M3, then across M1. Because both FETs are diode-connected and identical, each drop is one VGS.

That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.

Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.

36. Guess the shape of the answer: Step 1 - solve the reference for I

Estimation

Predict first

Substitute the square-law I = (1/2)KPn(W/L)Vov^2 with W/L = 40/4 = 10, so I = 600uA * Vov^2, and VGS = Vov + 0.8:

Commit before you compute: what does Step 1 - solve the reference for I come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Take the positive root

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.

37. Step 1 - solve the reference for I

Worked example

Substitute the square-law I = (1/2)KPn(W/L)Vov^2 with W/L = 40/4 = 10, so I = 600uA * Vov^2, and VGS = Vov + 0.8:

\[ 5=(600\,\mu A\cdot V_{ov}^2)(100\text{k})+2(V_{ov}+0.8) \]

Tidy into standard quadratic form

Why: 60 Vov^2 + 2 Vov - 3.4 = 0 (units of volts). The R1 term became 60 Vov^2.

Take the positive root

Why: Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.

\[ V_{ov}=0.222\ \text{V}\quad\Rightarrow\quad I\approx 29.6\ \mu A \]

38. Step 1 - solve the reference for I — line by line

Picture it

Animation

Shows: Each line of the worked example "Step 1 - solve the reference for I", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.

39. What has to be given first: Step 2 - every node voltage

Missing information

Discussion prompt

With VGS = 1.022 V and I = 29.6 uA, label the left branch from the ground up.

What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.

Hint: Anything you would have to invent to get started is a thing the problem must supply.

Answer:

2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.

40. Step 2 - every node voltage

Worked example

With VGS = 1.022 V and I = 29.6 uA, label the left branch from the ground up.

nodevoltagehow
M1 source0 Vground
M1 drain = M3 source1.022 Vone VGS up
M3 drain (below R1)2.044 Vtwo VGS up
across R12.96 V29.6uA x 100k

Check it closes on VDD

Why: 2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.

Right branch mirrors the current (29.6 uA) and, by symmetry, the internal node M4-source also sits at 1.022 V. Only M4's drain differs, because R2 differs from R1.

41. Step 2 - every node voltage — line by line

Picture it

Animation

Shows: Each line of the worked example "Step 2 - every node voltage", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: 2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.

42. Guess the shape of the answer: Step 3 - largest R2 before M4 drops out

Estimation

Predict first

M4 is the cascode (top) device. Its source sits at 1.022 V, and it needs VDS4 >= Vov to stay saturated:

Commit before you compute: what does Step 3 - largest R2 before M4 drops out come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.

Correct: Convert to a max drop across R2

Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.

43. Step 3 - largest R2 before M4 drops out

Worked example

Figure (svg): Vertical bar from 0 to 5 volts. M4 source sits at 1.022 volts. M4 needs at least one overdrive 0.222 volts above that, so its drain must stay at or above 1.244 volts. The drop across R2 can be at most 5 minus 1.244 equals 3.756 volts.

M4 stays saturated only while VD4 >= 1.244 V.

M4 is the cascode (top) device. Its source sits at 1.022 V, and it needs VDS4 >= Vov to stay saturated:

\[ V_{D4,\min}=V_{S4}+V_{ov}=1.022+0.222=1.244\ \text{V} \]

Convert to a max drop across R2

Why: The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.

\[ R_{2,\max}=\frac{3.756\ \text{V}}{29.6\ \mu A}\approx \boxed{127\ \text{k}\Omega} \]

The given 125k drops 3.70 V, leaving VD4 = 1.30 V - just above the 1.244 V floor. By design, you're right at the edge.

44. Step 3 - largest R2 before M4 drops out — line by line

Picture it

Animation

Shows: Each line of the worked example "Step 3 - largest R2 before M4 drops out", appearing one at a time.

The same working the example does, in the order a tutor would write it.

Takeaway: The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.

45. Something is wrong here: checking saturation against ground

Anomaly

Predict first

A student writes this, and it looks reasonable:

Testing the cascode M4 as if its source were at 0 V.

It is wrong. Say what breaks — and say it before you turn the page.

Correct: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.

Reference every voltage to M4's own source node, 1.022 V.

Why: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.

46. Trap: checking saturation against ground

Trap

The trap

Testing the cascode M4 as if its source were at 0 V.

Require VD4 >= Vov = 0.222 V

Why: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.

Conclude R2 can drop up to 4.78 V

Why: Gives R2,max ~ 161k - far too optimistic. You'd design M4 right out of saturation.

The fix

Reference every voltage to M4's own source node, 1.022 V.

Require VD4 >= VS4 + Vov = 1.244 V

Why: Saturation is about VDS = VD4 - VS4, and VS4 = 1.022 V here, not 0.

Max drop = 3.756 V, R2,max ~ 127k

Why: Correctly accounts for the cascode pedestal. The given 125k respects this limit; 161k would not.

47. Which of these survive contact with HW2 · DC Bias: Currents & Saturation (Baker…?

Two truths and a lie

Sort into buckets

Some of these hold up and some are the exact mistakes this lesson is built to prevent. Sort them.

Holds up
In saturation, the drain current is the square-law - this is the only device equation we need today:; Three PMOS share one source rail (VDD) and one gate node. M1 is diode-connected (gate tied to drain) and is forced to carry the 20 uA the sink pulls.; Copy that VSG onto another device with half the width, and you get half the current - independent of what its drain is doing, as long as it stays saturated.
Breaks
Treating the 2 V source (or R2) as if it controls the branch current, like a resistor divider.; Testing the cascode M4 as if its source were at 0 V.
sound
These are stated as this lesson states them — each one survives the edge cases HW2 · DC Bias: Currents & Saturation (Baker 20.25, 20.45) puts it through.
flawed
Each of these is lifted from a trap in this deck: reasonable-sounding, and wrong in a way that only shows up once you rely on it.

48. Rule out three: Check: the saturation limit on R2

Elimination

Eliminate the wrong options

Maximum R2 so M4 stays in saturation is closest to:

3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.

  • A. 127 kohm
  • B. 169 kohm
  • C. 161 kohm
  • D. 100 kohm

Survives elimination: A

Why: M4 needs VD4 >= VS4 + Vov = 1.022 + 0.222 = 1.244 V. The max drop across R2 is 5 - 1.244 = 3.756 V, so R2,max = 3.756 V / 29.6 uA ~ 127 kohm. The given 125k sits just under this.

49. Check: the saturation limit on R2

Check

Branch current 29.6 uA; M4 source at 1.022 V; Vov = 0.222 V; VDD = 5 V. What is the largest R2 that keeps M4 saturated?

Check your understanding

Maximum R2 so M4 stays in saturation is closest to:

  • A. 127 kohm (correct)
  • B. 169 kohm
  • C. 161 kohm
  • D. 100 kohm

Answer: A

Why: M4 needs VD4 >= VS4 + Vov = 1.022 + 0.222 = 1.244 V. The max drop across R2 is 5 - 1.244 = 3.756 V, so R2,max = 3.756 V / 29.6 uA ~ 127 kohm. The given 125k sits just under this.

Why B tempts people
Uses the full 5 V across R2 (5/29.6uA), ignoring that M4's drain must stay at 1.244 V, not 0 V.
Why C tempts people
The 'against ground' trap: requires only VD4 >= Vov = 0.222 V, forgetting M4's source pedestal of 1.022 V. That over-counts the allowed drop.
Why D tempts people
That is R1, the reference resistor on the other branch - it sets the bias current, not the saturation edge of M4.

50. Connect it up: HW2 · DC Bias: Currents & Saturation (Baker 20.25, 20.45)

Connect it up

Draw it

One page, no notation unless you need it: draw how these connect — Recipe: analyze any mirror / bias string · The process table we are using · The two master equations · The circuit: a 3-output PMOS mirror · A mirror copies a voltage, then scales. Put an arrow wherever one of them is what makes another possible, and label the arrow with why.

51. What you can do now

Recap

quantityresult
20.25: I in M3 (first order)10 uA (~11 uA with lambda)
20.45: branch current~29.6 uA
20.45: VGS1.022 V
20.45: max R2 for M4 sat~127 kohm

Next deck - HW2 Part 2: small-signal gain and frequency response (Problems 21.7, 21.26, 21.30, 21.36). The DC operating points you just found set every gm and ro there.

Sources

  1. R. J. Baker, CMOS: Circuit Design, Layout, and Simulation, 4th ed., Problems 20.25 and 20.45 (current mirrors and biasing) — Wiley-IEEE Press, 2019.
  2. Baker long-channel CMOS process (hand-analysis parameters): VDD=5 V, VTHN=0.8 V, VTHP=-0.9 V, KPn=120 uA/V^2, KPp=40 uA/V^2. — Stated explicitly on the parameter slide; student should reconcile against the exact Table 9.1 their section uses.
  3. All currents, overdrive voltages, node voltages, and R2,max recomputed by hand and cross-checked numerically (square-law, first order + lambda). — Author verification run, 2026-06-23.

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