Part 1 of 2 for ENEE 411 Homework 2. It works the two DC-operating-point problems end to end using the Baker long-channel process. In Problem 20.25 you trace VSG through a PMOS mirror to find the current in M3, which comes out at 10 uA to first order and about 11 uA once channel-length modulation is included. In Problem 20.45 you solve the reference-branch KVL quadratic for the bias current (about 29.6 uA), find every node voltage, and derive the largest R2 that still keeps the cascode M4 in saturation - about 127 kohm, which means the given 125 kohm sits right at the edge. The 23 slides include schematic SVGs, a table separating the stated parameters from the corrected ones, two traps, and two checks.
Subject: Analog CMOS IC Design · 51 slides · diagram-first lesson
Open the interactive version of this deck · Homework for this lesson
Title
ENEE 411 · Problems 20.25 & 20.45
Two operating-point problems, worked to the number. Find the current a mirror forces, and the biggest load resistor a cascode can tolerate before it leaves saturation.
Objectives
Every analog hand-analysis starts the same way: pin the operating point before you ever touch a small-signal model. By the end you can:
W/L ratio, not from the load.VSG / VGS and the overdrive Vov.VDS >= Vov test.Vov for the bias current.Concept
Problem 20.25 says use the long-channel process parameters. That table isn't on the homework sheet, so we use Baker's standard long-channel set. Every number downstream rides on these - if your section's Table 9.1 differs, swap them in and the method is identical.
| parameter | NMOS | PMOS |
|---|---|---|
| VDD | 5 V | 5 V |
| VTH | 0.8 V | -0.9 V |
| KP = mu*Cox | 120 uA/V^2 | 40 uA/V^2 |
| lambda (approx, L=2) | 0.06 /V | 0.06 /V |
| scale | 1 um (40/2 = 40um/2um) | 1 um |
Sanity check that these are the intended values: in Problem 20.45 they make the given R2 = 125k land just under the saturation limit we'll derive - exactly how a textbook problem is designed.
Comparison
Comparison matrix
From The process table we are using: refill the NMOS column from what you know. The rest of the table is as it appeared.
| parameter | NMOS | PMOS |
|---|---|---|
| VDD | 5 V | 5 V |
| VTH | 0.8 V | -0.9 V |
| KP = mu*Cox | 120 uA/V^2 | 40 uA/V^2 |
| lambda (approx, L=2) | 0.06 /V | 0.06 /V |
| scale | 1 um (40/2 = 40um/2um) | 1 um |
Concept
In saturation, the drain current is the square-law - this is the only device equation we need today:
\[ I_D=\tfrac{1}{2}\,KP\,\frac{W}{L}\,(V_{GS}-V_{TH})^2\,(1+\lambda V_{DS}) \]
A device is in saturation only while its drain-source voltage clears the overdrive:
\[ V_{DS}\ \ge\ V_{GS}-V_{TH}\equiv V_{ov} \]
For PMOS, read every voltage as source-relative: VSG, VSD, and |VTHP|. Same equations, signs flipped.
Counterexample
Discussion prompt
In saturation, the drain current is the square-law - this is the only device equation we need today:
That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.
Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.
Answer:
A device is in saturation only while its drain-source voltage clears the overdrive:
Ranking
Put in order
These are the steps of Recipe: analyze any mirror / bias string, scrambled. Put them back in order before the next slide shows you.
Vov (and VGS).(W/L) ratios to get each branch current.VDS >= Vov; only then is the square-law valid.Why: This is the order the recipe itself gives. Recalling the sequence without the slide in front of you is the difference between recognising the method and being able to run it — most of what goes wrong in practice is a step done out of turn.
Pattern
Both problems today are the same four moves. Memorize this order - it is the backbone of every bias calculation:
Vov (and VGS).(W/L) ratios to get each branch current.VDS >= Vov; only then is the square-law valid.Edge cases
Discussion prompt
Recipe: analyze any mirror / bias string works on the cases you have just seen. Push it to the edge: what is the most degenerate input it still handles — empty, zero, one item, everything equal — and what is the first case where it stops being true? Name the case, not just "it breaks".
Hint: Try the smallest legal input, then the largest, then the one where two things collide. Methods are specified at their edges; the middle takes care of itself.
Answer:
Both problems today are the same four moves. Memorize this order - it is the backbone of every bias calculation:
Section
Problem 1
Concept

Three PMOS share one source rail (VDD) and one gate node. M1 is diode-connected (gate tied to drain) and is forced to carry the 20 uA the sink pulls.
M2 (same 40/2) and M3 (20/2) read that same VSG. The 175k resistor and the 2 V source set drain voltages - they do not set the branch currents.
Goal: the current in M3.
Analogy
Discussion prompt
Explain The circuit: a 3-output PMOS mirror by analogy to something with no Analog CMOS IC Design in it at all — a queue, a recipe, a map, a bank balance, whatever fits. Then say where your analogy breaks.
Hint: An analogy that never breaks is not an analogy, it is the same idea wearing a hat. Find the seam — that is the part that is actually new.
Answer:
Three PMOS share one source rail (VDD) and one gate node. M1 is diode-connected (gate tied to drain) and is forced to carry the 20 uA the sink pulls.
Picture it
Figure (svg): 20 microamps forced into a diode-connected device produces VSG of 1.124 volts on the shared gate wire, which fans out to M2 and M3.
Discussion prompt
Read the picture before the words. What is this showing, and what is the one thing it is built to make obvious? Commit to an answer, then read on.
Hint: Name the parts, then say what changes between them — and if nothing changes, say what is being held still.
Answer:
The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.
Intuition
The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.
Figure (svg): 20 microamps forced into a diode-connected device produces VSG of 1.124 volts on the shared gate wire, which fans out to M2 and M3.
Copy that VSG onto another device with half the width, and you get half the current - independent of what its drain is doing, as long as it stays saturated.
Explain it
Discussion prompt
Explain A mirror copies a voltage, then scales to a student a year behind you. No notation, no jargon they have not met — and it still has to be true.
Hint: If your explanation needs a symbol they have never seen, you are describing the notation rather than the idea.
Answer:
The reference device is a little voltage-to-current converter run in reverse: force a current through a diode-connected FET and it develops exactly the VSG that sustains it.
Estimation
Predict first
M1 is forced to 20 uA. Invert the square-law to get its overdrive. PMOS W/L = 40/2 = 20, KPp = 40 uA/V^2.
Commit before you compute: what does Step 1 - VSG and Vov from M1 come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.
Correct: Solve for Vov
Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.
Worked example
M1 is forced to 20 uA. Invert the square-law to get its overdrive. PMOS W/L = 40/2 = 20, KPp = 40 uA/V^2.
\[ 20\,\mu A=\tfrac12(40\,\mu A)\,(20)\,V_{ov}^2 \]
Solve for Vov
Why: Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.
\[ V_{SG}=|V_{THP}|+V_{ov}=0.9+0.224=1.124\ \text{V} \]
This 1.124 V now sits on the gate node feeding M2 and M3.
Picture it
Animation
Shows: Each line of the worked example "Step 1 - VSG and Vov from M1", appearing one at a time.
The same working the example does, in the order a tutor would write it.
Takeaway: Vov^2 = 20uA / 400uA = 0.05, so Vov = 0.224 V of overdrive on M1.
Missing information
Discussion prompt
M2 is the same 40/2 device with the same VSG, so it copies the current 1:1.
What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.
Hint: Anything you would have to invent to get started is a thing the problem must supply.
Answer:
The 20 uA flows down through R2 to ground: VD2 = 20uA x 175k = 3.5 V.
Worked example
M2 is the same 40/2 device with the same VSG, so it copies the current 1:1.
\[ I_{D2}=\frac{(W/L)_2}{(W/L)_1}\,I_{D1}=1\times 20\,\mu A=20\,\mu A \]
Find M2's drain voltage
Why: The 20 uA flows down through R2 to ground: VD2 = 20uA x 175k = 3.5 V.
Verify saturation: VSD2 >= Vov
Why: VSD2 = VDD - VD2 = 5 - 3.5 = 1.5 V, well above Vov = 0.224 V. M2 is saturated, so the 1:1 copy is valid.
Picture it
Animation
Shows: Each line of the worked example "Step 2 - M2 carries 20 uA (and stays saturated)", appearing one at a time.
The same working the example does, in the order a tutor would write it.
Takeaway: VSD2 = VDD - VD2 = 5 - 3.5 = 1.5 V, well above Vov = 0.224 V. M2 is saturated, so the 1:1 copy is valid.
Worked example
Figure (svg): M3 has W over L of 20 over 2, half of M1's 40 over 2, so its current is one half of 20 microamps, equal to 10 microamps.
M3 shares the gate (same VSG = 1.124 V) but is 20/2 - half the W/L of M1.
\[ I_{D3}=\frac{(W/L)_3}{(W/L)_1}\,I_{D1}=\tfrac12\times 20\,\mu A=\boxed{10\ \mu A} \]
Verify saturation at the 2 V drain
Why: VSD3 = VDD - 2 = 5 - 2 = 3 V, far above Vov = 0.224 V. M3 is deep in saturation, so the mirror answer holds.
First-order answer: I in M3 = 10 uA.
Reverse engineer
Discussion prompt
Work backwards. The example finished here:
Verify saturation at the 2 V drain
What was it asked to do, and what must it have been given? Reconstruct the problem from its answer.
Hint: Every quantity in the result had to enter somewhere. Account for each one.
Answer:
M3 shares the gate (same VSG = 1.124 V) but is 20/2 - half the W/L of M1.
Concept
M1 and M3 see different drain voltages (M1: VSD = 1.124 V; M3: VSD = 3 V), so the (1 + lambda*VSD) factors don't cancel perfectly. With lambda = 0.06 /V:
\[ I_{D3}=10\,\mu A\cdot\frac{1+\lambda(3)}{1+\lambda(1.124)}=10\,\mu A\cdot\frac{1.18}{1.067}\approx 11.1\ \mu A \]
So ~10 uA to first order, ~11 uA once you include the drain-voltage dependence. Quote whichever level of precision your section expects - and confirm in SPICE.
Explain it
Discussion prompt
Explain Refinement: channel-length modulation to a student a year behind you. No notation, no jargon they have not met — and it still has to be true.
Hint: If your explanation needs a symbol they have never seen, you are describing the notation rather than the idea.
Answer:
M1 and M3 see different drain voltages (M1: VSD = 1.124 V; M3: VSD = 3 V), so the (1 + lambda*VSD) factors don't cancel perfectly. With lambda = 0.06 /V:
Anomaly
Predict first
A student writes this, and it looks reasonable:
Treating the 2 V source (or R2) as if it controls the branch current, like a resistor divider.
It is wrong. Say what breaks — and say it before you turn the page.
Correct: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.
The shared VSG sets the current; the load only sets the drain voltage.
Why: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.
Trap
Treating the 2 V source (or R2) as if it controls the branch current, like a resistor divider.
Compute 'I = 2 V / something' from the load
Why: This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.
Get a current that depends on the 2 V value
Why: Wrong model: change the 2 V to 3 V and you'd predict a big current change. The mirror says otherwise.
The shared VSG sets the current; the load only sets the drain voltage.
I_D3 = (W/L ratio) x I_ref = 1/2 x 20uA
Why: Current is fixed by geometry and VSG. The drain voltage is free to be whatever the load demands.
Use the load only to check VDS >= Vov
Why: The 2 V (VSD3 = 3 V) matters for one thing: confirming M3 is still saturated. It is, so I_D3 = 10 uA.
Break the constraint
Discussion prompt
The rule this trap just fixed:
Current is fixed by geometry and VSG. The drain voltage is free to be whatever the load demands.
Now break it on purpose. Build a case that violates it and follow the consequences until something visibly fails. Where does the failure first show up — and would you have noticed it if you had not been looking?
Hint: The dangerous rules are the ones whose violation still produces an answer. If yours fails loudly, try to find one that fails quietly.
Answer:
This is Ohm's-law thinking. A saturated FET is a current source - its drain voltage barely moves the current.
Elimination
Eliminate the wrong options
To first order, what is the drain current in M3?
3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.
Survives elimination: A
Why: M3 shares M1's VSG but has half the W/L (20/2 vs 40/2). A mirror scales current by the W/L ratio: I_D3 = (1/2) x 20 uA = 10 uA. Its 2 V drain only matters for confirming saturation (VSD = 3 V > Vov), which checks out.
Check
M1 (40/2) carries 20 uA and is diode-connected; M3 (20/2) shares its gate and its drain sits at 2 V. Solve before tapping.
Check your understanding
To first order, what is the drain current in M3?
Answer: A
Why: M3 shares M1's VSG but has half the W/L (20/2 vs 40/2). A mirror scales current by the W/L ratio: I_D3 = (1/2) x 20 uA = 10 uA. Its 2 V drain only matters for confirming saturation (VSD = 3 V > Vov), which checks out.
Section
Problem 2
Concept

Left branch (R1, M3, M1) is the reference: both NMOS are diode-connected, so the gate of each ties to its own drain.
Right branch copies it: M2 mirrors M1, M4 mirrors M3 (gates tied across). All four are 40/4.
Find: the branch currents, the node voltages, and the largest R2 that keeps the cascode M4 in saturation.
Analogy
Discussion prompt
Explain The circuit: stacked NMOS mirrors by analogy to something with no Analog CMOS IC Design in it at all — a queue, a recipe, a map, a bank balance, whatever fits. Then say where your analogy breaks.
Hint: An analogy that never breaks is not an analogy, it is the same idea wearing a hat. Find the seam — that is the part that is actually new.
Answer:
Left branch (R1, M3, M1) is the reference: both NMOS are diode-connected, so the gate of each ties to its own drain.
Intuition
Walk from VDD to ground down the left branch: you drop across R1, then across M3, then across M1. Because both FETs are diode-connected and identical, each drop is one VGS.
\[ V_{DD}=I\,R_1+V_{GS3}+V_{GS1}=I\,R_1+2V_{GS} \]
But I itself depends on VGS through the square-law - so this single loop is a quadratic in the overdrive. That coupling is the whole problem.
Counterexample
Discussion prompt
Walk from VDD to ground down the left branch: you drop across R1, then across M3, then across M1. Because both FETs are diode-connected and identical, each drop is one VGS.
That is stated as though it always holds. Do one of two things: produce a case where it fails, or say precisely what rules such a case out. "It just does" is not on the menu.
Hint: Hunt at the extremes first — zero, one, negative, empty, equal. If every extreme survives, the reason they survive is the proof.
Estimation
Predict first
Substitute the square-law I = (1/2)KPn(W/L)Vov^2 with W/L = 40/4 = 10, so I = 600uA * Vov^2, and VGS = Vov + 0.8:
Commit before you compute: what does Step 1 - solve the reference for I come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.
Correct: Take the positive root
Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.
Worked example
Substitute the square-law I = (1/2)KPn(W/L)Vov^2 with W/L = 40/4 = 10, so I = 600uA * Vov^2, and VGS = Vov + 0.8:
\[ 5=(600\,\mu A\cdot V_{ov}^2)(100\text{k})+2(V_{ov}+0.8) \]
Tidy into standard quadratic form
Why: 60 Vov^2 + 2 Vov - 3.4 = 0 (units of volts). The R1 term became 60 Vov^2.
Take the positive root
Why: Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.
\[ V_{ov}=0.222\ \text{V}\quad\Rightarrow\quad I\approx 29.6\ \mu A \]
Picture it
Animation
Shows: Each line of the worked example "Step 1 - solve the reference for I", appearing one at a time.
The same working the example does, in the order a tutor would write it.
Takeaway: Vov = 0.222 V, so VGS = 1.022 V and I = 600uA x (0.222)^2 = 29.6 uA in each branch.
Missing information
Discussion prompt
With VGS = 1.022 V and I = 29.6 uA, label the left branch from the ground up.
What do you need to know — or decide — before the first line can be written? List everything the problem has to hand you.
Hint: Anything you would have to invent to get started is a thing the problem must supply.
Answer:
2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.
Worked example
With VGS = 1.022 V and I = 29.6 uA, label the left branch from the ground up.
| node | voltage | how |
|---|---|---|
| M1 source | 0 V | ground |
| M1 drain = M3 source | 1.022 V | one VGS up |
| M3 drain (below R1) | 2.044 V | two VGS up |
| across R1 | 2.96 V | 29.6uA x 100k |
Check it closes on VDD
Why: 2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.
Right branch mirrors the current (29.6 uA) and, by symmetry, the internal node M4-source also sits at 1.022 V. Only M4's drain differs, because R2 differs from R1.
Picture it
Animation
Shows: Each line of the worked example "Step 2 - every node voltage", appearing one at a time.
The same working the example does, in the order a tutor would write it.
Takeaway: 2.044 V + 2.96 V = 5.0 V = VDD. The KVL loop is consistent.
Estimation
Predict first
M4 is the cascode (top) device. Its source sits at 1.022 V, and it needs VDS4 >= Vov to stay saturated:
Commit before you compute: what does Step 3 - largest R2 before M4 drops out come out to? A rough magnitude and the right form is enough — the point is to have something concrete to be wrong about.
Correct: Convert to a max drop across R2
Why: A prediction you can defend turns the computation into a check rather than a leap of faith — and an answer that contradicts it is caught on the spot. The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.
Worked example
Figure (svg): Vertical bar from 0 to 5 volts. M4 source sits at 1.022 volts. M4 needs at least one overdrive 0.222 volts above that, so its drain must stay at or above 1.244 volts. The drop across R2 can be at most 5 minus 1.244 equals 3.756 volts.
M4 is the cascode (top) device. Its source sits at 1.022 V, and it needs VDS4 >= Vov to stay saturated:
\[ V_{D4,\min}=V_{S4}+V_{ov}=1.022+0.222=1.244\ \text{V} \]
Convert to a max drop across R2
Why: The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.
\[ R_{2,\max}=\frac{3.756\ \text{V}}{29.6\ \mu A}\approx \boxed{127\ \text{k}\Omega} \]
The given 125k drops 3.70 V, leaving VD4 = 1.30 V - just above the 1.244 V floor. By design, you're right at the edge.
Picture it
Animation
Shows: Each line of the worked example "Step 3 - largest R2 before M4 drops out", appearing one at a time.
The same working the example does, in the order a tutor would write it.
Takeaway: The drop VDD - VD4 can be at most 5 - 1.244 = 3.756 V before M4 starves.
Anomaly
Predict first
A student writes this, and it looks reasonable:
Testing the cascode M4 as if its source were at 0 V.
It is wrong. Say what breaks — and say it before you turn the page.
Correct: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.
Reference every voltage to M4's own source node, 1.022 V.
Why: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.
Trap
Testing the cascode M4 as if its source were at 0 V.
Require VD4 >= Vov = 0.222 V
Why: Forgets M4 is stacked: its source is held at 1.022 V by M2 below it, not at ground.
Conclude R2 can drop up to 4.78 V
Why: Gives R2,max ~ 161k - far too optimistic. You'd design M4 right out of saturation.
Reference every voltage to M4's own source node, 1.022 V.
Require VD4 >= VS4 + Vov = 1.244 V
Why: Saturation is about VDS = VD4 - VS4, and VS4 = 1.022 V here, not 0.
Max drop = 3.756 V, R2,max ~ 127k
Why: Correctly accounts for the cascode pedestal. The given 125k respects this limit; 161k would not.
Two truths and a lie
Sort into buckets
Some of these hold up and some are the exact mistakes this lesson is built to prevent. Sort them.
VSG onto another device with half the width, and you get half the current - independent of what its drain is doing, as long as it stays saturated.Elimination
Eliminate the wrong options
Maximum R2 so M4 stays in saturation is closest to:
3 of these 4 are wrong. Strike them one at a time, and say what rules each one out before you strike the next. The survivor is the answer.
Survives elimination: A
Why: M4 needs VD4 >= VS4 + Vov = 1.022 + 0.222 = 1.244 V. The max drop across R2 is 5 - 1.244 = 3.756 V, so R2,max = 3.756 V / 29.6 uA ~ 127 kohm. The given 125k sits just under this.
Check
Branch current 29.6 uA; M4 source at 1.022 V; Vov = 0.222 V; VDD = 5 V. What is the largest R2 that keeps M4 saturated?
Check your understanding
Maximum R2 so M4 stays in saturation is closest to:
Answer: A
Why: M4 needs VD4 >= VS4 + Vov = 1.022 + 0.222 = 1.244 V. The max drop across R2 is 5 - 1.244 = 3.756 V, so R2,max = 3.756 V / 29.6 uA ~ 127 kohm. The given 125k sits just under this.
Connect it up
Draw it
One page, no notation unless you need it: draw how these connect — Recipe: analyze any mirror / bias string · The process table we are using · The two master equations · The circuit: a 3-output PMOS mirror · A mirror copies a voltage, then scales. Put an arrow wherever one of them is what makes another possible, and label the arrow with why.
Recap
| quantity | result |
|---|---|
| 20.25: I in M3 (first order) | 10 uA (~11 uA with lambda) |
| 20.45: branch current | ~29.6 uA |
| 20.45: VGS | 1.022 V |
| 20.45: max R2 for M4 sat | ~127 kohm |
Next deck - HW2 Part 2: small-signal gain and frequency response (Problems 21.7, 21.26, 21.30, 21.36). The DC operating points you just found set every gm and ro there.
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